➀ Toshiba introduced two high-performance N-channel power MOSFETs (TPM1R908QM and TPM7R10CQ5) using SOP Advance(E) packaging, targeting industrial power systems, data centers, and telecom infrastructure;

➁ The new packaging reduces electrical/thermal parasitics, achieving 65% lower resistance and 15% lower thermal resistance than previous designs, enabling higher efficiency and reliability;

➂ Features include low RDS(on) (1.5 mΩ), high current capacity (up to 238A), fast switching (50 ns rise time), and compact 4.9×6.1mm footprint for space-constrained applications.